2001. 3. 22 1/2 semiconductor technical data KTD1003 epitaxial planar npn transistor revision no : 4 high current application. features high dc current gain : h fe =800 3200. (v ce =5.0v, i c =300ma). wide area of safe operation. low collector saturation voltage : v ce(sat) =0.17v (i c =500ma, i b =5.0ma). maximum rating (ta=25 1 ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification a:800 1600, b:1200 2400, c:2000 3200 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =60v, i e =0 - - 100 na emitter cut-off current i ebo v eb =8v, i c =0 - - 100 na dc current gain h fe (1) note v ce =5.0v, i c =300ma 800 1500 3200 h fe (2) v ce =5.0v, i c =1.0a 400 - - collector-emitter saturation voltage v ce(sat) i c =500ma, i b =5.0ma - 0.17 0.30 v base-emitter saturation voltage v be(sat) i c =500ma, i b =5.0ma - 0.80 1.2 v collector output capacitance c ob v cb =10v, i e =0, f=1.0mhz - 18 30 pf transition frequency f t v ce =10v, i c =500ma, f=100mhz 150 250 - mhz base-emitter voltage v be v ce =5v, i c =100ma - 630 700 mv characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 8 v collector current i c 1.0 a collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 p c * : KTD1003 mounted on ceramic substrate (250mm 2 x0.8t) l type name h rank fe lot no. marking
2001. 3. 22 2/2 KTD1003 revision no : 4 h - i c collector current i (a) 10m fe dc current gain h 50 i - v cce ce collector-emitter voltage v (v) 0 c 0 collector current i (a) fe c 30m 100m 300m 1 3 10 5 100 300 500 1k 3k 5k 10k v =10v ce ce v =5.0v ce v =2.0v 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 pulsed 1 0 m a 5ma 4m a 3m a 2ma i =1ma b 6ma 7ma 8ma 9ma i - v cce ce collector-emitter voltage v (v) c collector current i (a) v c collector current i (a) be(sat) v (v) ce(sat) c be(sat) v - i base-emitter saturation voltage collector-emitter saturation voltage v (v) ce(sat) dc current gain h fe collector current i (a) c h - i fe c 10k 5k 3k 1k 500 300 100 510 3 1 300m 100m 30m 50 10m v =5.0v ce ta=75 c ta=25 c ta=-25 c 0.01 0.03 0.03 0.1 0.3 1 3 10 0.01 0.1 0.3 1 3 10 v : i / i =2 0 be(sat ) b c 50 20 v ce (sat) i /i =100 c b pulsed 1.0 0.8 0.6 0.4 0.2 20 16 12 8 4 0 0 30 0 a 250 a 20 0 a 150 a 10 0 a 500 a i =50 a b
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